The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.
Non-returnable
₹50.00
Product Details
Product Details
Product Details
Features As a remote variable resistor:
■ ≤ 100Ω to ≥ 300MΩ
■ ≤ 15pF shunt capacitance
■ ≥ 100GΩ I/O isolation resistance As an analog switch:
■ Extremely low offset voltage
■ 60 Vpk-pk signal capability
■ No charge injection or latch-up
■ UL recognized (File #E90700)
Applications As a remote variable resistor:
■ Isolated variable attenuator
■ Automatic gain control
■ Active filter fine tuning/band switching As an analog switch:
■ Isolated sample and hold circuit
■ Multiplexed, optically isolated A/D conversion
